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8楼。here is the waveform, at 100ma idle current. Nice.
here is the FFT for the waveform. mostly 2nd order harmonics (0.6v/27v=1.8%?) and higher order harmonics go disappear very fast. Nice too.
这里是波形,在一〇 〇毫安闲置电流。好的。
这里是为FFT的波形。大多是第二次谐波( 0.6v/27v = 1.8 % ? )和较高阶的谐波去消失非常快。尼斯太。
9楼。here is the FFT profile for the original NAP against MOSFET.
As you can see, while the MOSFET's FFT (red curve) disappear very fast, the higher order harmonics in the original NAP (green curve) continues into multi-meghertz, thanks in part to its high open loop gain.
这里是FFT的个人资料,为原来的午睡对MOSFET的。
正如您所看到的,而MOSFET的快速傅立叶变换(红色曲线)消失得很快,高阶谐波在原来的国家行动计划(绿色曲线)继续为多meghertz ,感谢您的一部分,其高开环增益。
10楼。Now, comes the sad part: the slew rate.
as you can see, it takes the amp about 15us to get to 30v, or about 2v/us. Not a great number for a high performance power amp.
However, that is at an output power of (30)^2/(2*4)=100wrms.
BTW, the amp has superb control of the output, with no ringing on either upper edge or lower edge.
现在,来可悲的一部分:转换率。
你可以看到,它以安培约15us去30V的,或约2v/us 。不是一个很大的数目为一种高性能的功率放大器。
然而,正处在一个输出功率为( 30 ) ^ 2 / ( 2 * 4 ) = 100wrms 。
的BTW ,安培有高超的控制输出,没有电话铃声要么上缘或更低的优势。
11楼。the amp presented in post #7 can be assembled with the existing nap140 pcb. you just need to omit a few parts and use some different parts. It should be an excellent amp for anyone, especially if you use those inexpensive power mosfets as output devices.
you can make more analysis to it, or add some parts (like r/c decoupling for the front stages).
but this is going to be a good amp for you to try, especially if you already have the PCB.
该安培介绍,在邮政# 7可以组装与现有的nap140的PCB 。你只需要省略一些零件和使用一些不同的部分。它应是一个极好的安培的人,特别是如果您使用那些廉价的功率MOSFET作为输出设备。
你可以作出更多的分析它,或新增部分(如r /炭解耦前阶段) 。
不过,这将会是一个良好的安培,为您尝试,尤其是如果您已经有在PCB上。
12楼。the advantage of mosfets comes in at its high current capabilities.
here are two waveforms.
1) the improved BJT driving into a 1ohm load.
2) the mosfet version driving into the same 1ohm load.
I would rather listen to the mosfet version.
优势的MOSFET来在在其高电流能力。
这里是两个波形。
1 )改善bjt驾驶成为一个1ohm负荷。
2 ) MOSFET的版本驾驶到相同1ohm负荷。
我宁愿听MOSFET的版本。
13楼。for those who are adventurous, here is another version of the same amp, running off a bootstrap network instead.
major changes are highlighted:
a) R105/R109/C29: the bootstrap network.
b) if you use an LED (forward biased) in place of the 1n4148s, you can change the value of R108 to get the amp to idle at roughly the same current (1ma).
c) R102 downsized to 22ohm, to provide more output swing. You can set R102 back to 110 ohm but you will lose a volte or so of output swing.
BTW, the amp clips quite with grace and no harsh harmonics.
对于谁是冒险,这里是另一个版本的相同安培,运行引发的Bootstrap网络。
重大变化,突出:
一) r105/r109/c29 :引导网络。
b )如果您使用的LED (着偏见)在地方的1n4148s ,你可以改变的价值r108得到安培闲置在大致相同的电流(一毫安) 。
三) r102精简到22ohm ,以提供更多的输出进行得如火如荼。您可以设定r102回到110欧姆,但您将失去一转,或使输出进行得如火如荼。
的BTW ,安培剪辑相当与恩典和没有苛刻的谐波。
14楼。in summary:
we presented three Nap140 clones that will be a better amp than the original nap140 and that can be built on the same pcb. Of course, I perfer the mosfet versions for their lower costs, higher performance and better current capabilities.
enjoy.
在摘要:
我们提出了3 nap140无性系这将是一个更好的安培比原来的nap140和可以建立在相同的PCB 。当然,我perfer MOSFET的版本为他们降低成本,更高的性能和更好的现有能力。
享受。 |
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