求D1435 B1301参数
如标题 想要这对管的参数 上百度也找不到详细资料管脚排列哪位兄弟有的帮下忙 先谢了 本帖最后由 忧郁绵羊 于 2014-1-16 10:37 编辑是2sb1435 吧
SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1435
DESCRIPTION
·With TO-3PN package
·DARLINGTON
·High DC current gain
·Complement to type 2SB1031
APPLICATIONS
·For low frequency power amplifier and
high current switching applications
PINNING
PIN DESCRIPTION
1 Base
2 Collector;connected to
mounting base
3 Emitter
Absolute maximum ratings(Tc=25)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter 100 V
VCEO Collector-emitter voltage Open base 100 V
VEBO Emitter-base voltage Open collector 7 V
IC Collector current 15 A
ICM Collector current-Peak 20 A
IB Base current 3 A
PC Collector power dissipation TC=25 100 W
Tj Junction temperature 150
Tstg Storage temperature -55~150
Fig.1 simplified outline (TO-3PN) and symbol
SavantIC Semiconductor Product Specification
2
Silicon NPN Power Transistors 2SD1435
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=1mA, RBE=> 100 V
V(BR)EBO Emitter-base breakdown voltage IE=50mA, IC=0 7 V
VCEsat-1 Collector-emitter saturation voltage IC=8A ,IB=16mA 2.0 V
VCEsat-2 Collector-emitter saturation voltage IC=15A ,IB=150mA 3.0 V
VBEsat-1 Base-emitter saturation voltage IC=8A ,IB=16mA 2.5 V
VBEsat-2 Base-emitter saturation voltage IC=15A ,IB=150mA 3.5 V
ICBO Collector cut-off current VCB=100V, IE=0 100 µA
ICEO Collector cut-off current VCE=80V, RBE=> 1.0 µA
hFE DC current gain IC=8A ; VCE=3V 1000 20000
Switching times
ton Turn-on time 2.0 µs
toff Turn-off time
IC = 8A,IB1 =-IB2 =16mA
8.0 µs SavantIC Semiconductor Product Specification
3
Silicon NPN Power Transistors 2SD1435
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.1mm)
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